Subject: 2006
April Board Exam set 1
Reviewer:
kuging2001
Direction: Ang JRCS himo-himo lng ni nga review center para pakita-kita
ky nani hehehe… ang mastermind amo si REX!!! Tapos nyo answer sang mga problems
kindly text your answers sa pinakagwapo nga reviewer sang JRCS hehehehe joke
joke joke!!! Answers will be check this coming
A 0.25 MHz B
0.5 MHz C 1 MHz D 10 MHz
A Master oscillator B
Final power amplifier to feed antenna
C Buffer stage D
All of the above
A 25 % B 33 % C
50 % D 100 %
A 1000 kHz B
100 MHz C 500 MHz D 10 GHz
A 12.9 A B
13.4 A C 16.6 A D 21.8 A
A 998 kHz and 1002 kHz
B 998 kHz, 99.2 kHz, 10008 kHz, 1002.0 kHz
C 998 kHz, 999.2 kHz, 999.7 kHz, 1000.3 kHz,1000.8 kHz, and
1002.0 kHz,
D None of the above.
A 180 W B
130 W C 60 W D 90 W
A 128.1 W B
256 .2 W C 512.5 W D 886.6 W
A AM B FM C Both AM & FM D None of the above.
A VSB only B VSB and
SSB
C VSB , SSB and DSB D
All of the above
A The bandwidth will increase B There will be interference with other
signals
C Efficiency of transmitter will increase D The wave will get distorted.
A is negligible low since grid is negative
B is small as compared to that for plate modulation
C is large as compared to that for plate modulation
D is almost the same as compared to that for plate
modulation
A same as the power of unmodulated carrier
B twice as the power of unmodulated carrier
C four time the power
of unmodulated carrier
D 3/2time the power
of unmodulated carrier
A 20 Hz to 20 kHz B
20 kHz to 200kHz
C 2MHz to 20MHz D
20 MHz to 200 MHz
A Active filter B
Mechanical filter C LC filter D
A To provide increase bandwidth B To reduce power consumption
C Improve noise immunity
D
Frequency stabilization.
A modulation voltage B
frequency
C either of the above D
non of the above
A modulation voltage B
frequency
C either of the above D
none of the above
A 30 % B 45 % C
60 % D 90 %
A Class A B
Class B C Class C D either of the above
A 90 Hz B
90 kHz C 900 kHz D 90 MHz
A 0.5 MHz B
1 MHz C 2 MHz D 4 MHz
A LF B
HF C VHF D UHF
A noise decrease by increasing deviation
B noise decrease by decreasing deviation
C noise decrease by marinating deviation constant
D none of the above
A 75 kHZ B
115 kHZ C 75 MHZ D115 MHZ
A Varactor modulator B
Armstrong modulator
C Reactance FET modulator D
Reactance bipolar transistor modulator
A prior to modulation
B after modulation
C for de-emphasising high frequency component
D for de-emphasising low frequency component
A single tuned circuit
B double tuned circuit with primary and secondary tuned to
the same frequency
C double tuned circuit with primary and secondary tuned to
the different frequency
D none of the above
A lies in the poorer audio response of phase modulation
B is too great to make the two systems compatible
C is purely theoretical because practically both are
identical
D lies in the different definitions of the modulation index.
A the carrier frequency disappear when the modulation index
is large
B the amplitude of any side band depends on the modulation
index
C the total number of sideband depend on the modulation
index
D the carrier frequency cannot disappear.
A efficiency B
duty cycle C base D bandwidth
A PAM B PPM C PWM D
none of the above.
A sampling rate B
number of the quantisation level
C message signal bandwidth D
all of the above
A PCM B PWM C Both (A) & (B) D none of the above
A sampling rate B
number of quantization levels
C imformation signal bandwidth D none of the above
A line-of-sight distance B
skip distance
C radial distance D
effective distance.
A three times the input S/N B
one and half times the input S/N
C twice the input S/N D
none of the above.
A reduction in transmission bandwidth B increase in maximum SNR
C increase in SNR for low level signals D simplification of quantization
process.
A its inability to handle analog signals B the high error rate which its
quantizing noise reduces
C its incompatibility with TDM D the larger bandwidth that are required for
it.
A to overcome quantizing noise in PCM
B in PCM transmitters, to allow amplitude limiting in the
receivers
C to protect small signal in PCM from quantizimg distortion
D in PCM receiver to overcome impulse noise.
A noise B
power C bandwidth D both B & C
A White noise B
Gaussian noise D Pink noise D Static Noise
A below 450 MHz B
between 30 Hz to 20 kHz
C above 500 MHz D
above 100 GHz
A 20 kHz B
20 MHz C 100 kHz D 10 GHz
A 100 years B
11 years C 28 days D 11 months
A 8 MHz to 1.5 GHz B
4.5 MHz
C 800 kHz to 1.5 GHz D 100 MHz
to 500 MHz
A 1 mV B
0.514 mV C 0.1 mV D 5.14 mV
A flicker noise B
white noise C pink noise D 1/f noise
A 30 dB B
-3 dB C 6.24 dB D 3 dB
A 0.314 MHz B
3.14 MHz C 4.17 MHz D 8.17 MHz
A produce free
electrons B
not produce free electrons
C emit electrons from
the surface D produce
protons.
A emitter-base
junction
B collector-base junction
C either of the
junction
D both of the junctions.
A 10 mV B 100 mV C 0.5 mV D 1 mV
A majority carriers
flow across the junction
B minority carriers
flow across the junction
C carrier
recombination takes place near the junctions
D depletion layer
gets reduced.
A majority swept are
reverse across the junction
B only one side is
illuminated
C reverse current is
smaller as compared to photo current
D reverse current is
large as compared to photo current
A pyro-electric
effect
B secondary emission
C photo-voltaic
effect
D photo-conduction.
A red part of the
visual region of the spectrum
B violet region
C green area of the
spectrum
D white part of the
spectrum.
A the PN junction is
reverse bias B the PN
junction become hot
C the depletion
region becomes wider D hole and
electrons combine in the depletion region.
A a PN photodiode B a
PIN photodiode
C a photo voltaic
cell
D a phototransistor & a light dependent register
A 1.1 and 3 V B 3.1 and 5 V C 7.1 and 9 V D 10.1 and 15 V
A unijunction device B device
with three junctions
C device with four junctions D
none of the above.
A a combination of
diac and transistor B a
combination of diac and triac
C a set of SCRs D
PNPN device
A Diac B Triac
C SUS D BCS
A Diac B Triac
C SUS D none of
the above.
A Slow switching time
and large VH B Slow
switching time and smaller VH
C Faster switching time
and smaller VH D Faster switching
time and large VH
A diac B
Triac
C silicon-controlled rctifier SCR D none of the above.
A 2 terminal switch B 2
terminal bilateral switch
C 3 terminal
unilateral switch
D 3 terminal biderctional switch.
A 2160 Hz B 720 Hz C 360 Hz D 60 Hz
A 10 ms B 10 us C 30 ms D 1 sec.
A low frequency
output B
low voltage output
C didtortion less
output D noiseless output
A Ten B
One C Four D Two
A 1 B
0 C Either 1
or 0 D It can not define.
A Digital input B
Analog out put
C Nature of the output depend on voltage D It depends on resolution of the
potentiometer
A Slow change in the value of a resistor B sinusoidal wave
A Encoder B
Decoder C CPU D Converter
A 0 * 0 = 0 B
0 * 1 = 1 C 1 * 1 = 1 D 1 + 1 = 10
A 81.707 B
81.700 C 82.777 D 82.300
A AND B
NAND C OR D NOR
A X(-) = 1 B
X + Y = Y + X C XY = YX D X + (Y + Z) = (X + Y ) + Z
A X(YZ) = (XY)Z B
X (Y + Z ) = XY + XZ
C X + XY = X D
X(X + Y) = 1
A 0 B
1 C C D C(-)
A 5A B
nA C A D Infinity.
A 1 at any input causes the output to be at logic 1
B 1 at any input causes the output to be at logic 0
C 0 at any input causes the output to be at logic 0
D 0 at any input causes the output to be at logic 1
A Common base amplifier B
Common Collector amplifier
C Common emitter amplifier D
All of the above
A Address modification B
For indirect address
C Storing one of the operands D Pointing to the stack address.
A Two B
Three C Four D Eight
A NAND Gate B
D/A converters C Shift registers D None of the above.
A TTL B
CMOS
C Both TTL and CMOS D
Neither TTL nor CMOS
A does not require transistors with high current gain and
hence they have smaller geometry
B uses compact bipolar transistors
C Does not require isolation diffusion
D use dynamic logic instead of static logic.
A Sinusoidal B
Trapezoidal C Rectangular D Triangular
A A Free running MV B
JK flip-flop
C Either of A or B
Above D
Neither of A or B Above
A ROM B
RAM C PROM D EPROM
A Two B
Four C Eight D
Sixteen
A a NAND gate with OR gate B
a AND gate with XOR gate
C only And gate D
neither OR nor XOR nor AND.
A DTL B
TTL C ECL D RTL
A PMOS B
NMOS C CMOS D None of the above.
A 6400 B
64000 C 65536 D 64536
A 12,333 B
14,666 C 16,384 D 16,843
A Low cost per bit B
High cost per bit C Low density D None of the above.
100.In magnetic film memory, the memory element consists of
A Plated wires B
Super conductive material
C Nickel iron alloy
Dopped aluminum.
Subject: 2006
April Board Exam set 2
Reviewer:
kuging2001
Direction: Ang JRCS himo-himo lng ni nga review center para
pakita-kita ky nani hehehe… ang mastermind amo si REX!!! Tapos nyo answer sang
mga problems kindly text your answers sa pinakagwapo nga reviewer sang JRCS
hehehehe joke joke joke!!! Answers will be check this coming
A UHF & SHF B
SHF & EHF C UHF,SHF &
EHF D VLF,LF & MF
A Length of tube B
type of input and output
C Non of the above D
bothe A and B
A a resonant cavity B a shorted
line
C an open line D
a cathode.
A 3 cm B
0.3 cm C 0.03 cm D 30 cm
A Low amplification signal emitting radiowaves
B Last aligned sound emitting radiowaves
C Light amplification by simulated emission of radiation
D Light amplification by symmetric emission of radiation
A Opto electronics B
Fiber optics
C Telephone D
All of the above
A transmitter B
resonator C waveguide D loop
A in the center of the conductor B near the surface of the conductor
C through central core of the conductor D uniformly through the conductor.
A Voltage different B
current variations
C varying magnetic fields D
varying magnetic and electric fields
A brass and aluminium B
cast iron and steel
C nono-metallic solids including plastic D highcarbon steel and vanadium steel.
A Waveguides are used to minimize skin effect at microwave
frequencies
B Arectangular waveguide serves as a high pass filter
C TE10 is the dominant mode for co-axial cable
D All of the above
A the farady effect B
ducting
C tropospheric scatter D
ionospheric refelection
A low directional coupling B
poor directivity
C high SWR D
narrow bandwidth
A Coaxial magnetron B
CFA
C Travelling wave magnetron D
Reflex klystron.
A because of atmospheric attenuation B because of earth's curvature
C because of output tube power limitations D to ensure that the applied dc voltage is
not excessive.
A to couple two different antennas to transmitter without
mutual interference
B to allow the one transmission without mutual interference
C to prevent interference between two antennas when they are
connected to a receiver
D to increase the speed of the pulses in pulses radar.
A TWT B
CFA C BWO D Multi-cavity klystron.
A Omni-directional antenna
B Pencil beam antenna
C Popularly used antenna in terrestrial line-of-sight
communication
D Not a broad cast antenna.
A noise figure increases
B transit time becomes too short
C shunt capacitance reactance become too large
D series inductive reactances become too small.
A The electrodes are brought closer together
B A higher anode current is used
C Multiple or coaxial leads are used
D The anode voltage is made larger.
A Semiconductor device B
Resistors
C Capacitors D Inductor
A Transormer B
Silicon controlled rectifier
C Electric bulb D
Loudspeaker
A 0.5 * 10-15 B
0.5 * 10-21 C 0.5 * 10-3 D 0.5 * 10-4
A Diffusing B
Drift C Mixing D Doping
A Semiconductor device B
Vacuum tube device
C Capacitors D
All of the above
A no heat is required B
small size and light in weight
C very low power consumption D
all of the above.
A electrons from the base in case of PNP transistor
B electrons from the emitter in case of PNP transistor
C hole from the base in case of NPN transistor
D hole from the base in case of PNP transistor
A the collector junction has negligible resistance
B only holes cross the collector junction
C the collector-base junction is reverse baised and the
emitter base junction is forward baised
D only majority carriers cross the collector junction.
A for dissipating heat B
to distingush it from other regions
C as it is sensitive to untra violet rays D to reduce resistance in the path
of flow of electrons.
A Vacuum tube only B transistors only
C Vacuum tube and transistors only D none of the above
A glass envelop only B
metal envelope only
C either of (A) or (B) above D
none of the above.
A Public address system B
Radio receiver
C Radio transmitter D
Electroplating plants.
A provide dc supply B
generate high power radio waves
C record programs D
provide lighting inside the studio.
A transistor are non-linear
B transistor do not have grid
C high power transistor operation and availablity are very
difficult
D heat dissipation from transistor is difficult.
A their long life B
their trouble free life
C their capacity to handle high power D their batter reliability .
A Zener diode B
Vacuum diode C Crystal diode D All of the above.
A Gas diode B
Crystal diode
C Transistor in CB mode D
All of the above..
A the potential barrier is reduced to zero B forward bias exceeds a certain value
C reverse bias exceeds a certain value D forward current exceeds a certain
value.
A Silicon B
Phosphorous C Sulphur D Gallium phosphide.
A Gallium arsenide B
Calcuim phosphide C Silicon D Non of the above.